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IXFH12N80P IXFQ12N80P
IXFV12N80P IXFV12N80PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
TO-247 (IXFH) Outline
Min. Typ. Max.
g fs
V DS = 20 V; I D = 0.5 I D25 , Note 1
8
14
S
C iss
2800
pF
1
2
3
? P
C oss
C rss
t d(on)
t r
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
210
19
23
26
pF
pF
ns
ns
t d(off)
t f
R G = 5 Ω (External)
70
25
ns
ns
e
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
Q g(on)
51
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A 1
A 2
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
13
19
nC
nC
A 4.7 5.3
2.2 2.54
2.2 2.6
.185 .209
.087 .102
.059 .098
b 1
b 2
R thJC
R thCS
(TO-247 & TO-3P)
0.21
0.35
° C/W
° C/W
b 1.0 1.4
1.65 2.13
2.87 3.12
C .4 .8
.040 .055
.065 .084
.113 .123
.016 .031
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
Symbol
Test Conditions
Min. Typ. Max.
? P 3.55 3.65
.140 .144
I S
V GS = 0 V
12
A
Q 5.89 6.40
R 4.32 5.49
0.232 0.252
.170 .216
S 6.15 BSC
242 BSC
I SM
V SD
Repetitive
I F = I S , V GS = 0 V, Note 1
36
1.5
A
V
t rr
Q rm
I rm
I S = 12 A, V GS = 0 V
-di/dt = 100 A/ μ s, V R = 100 V
200
0.8
4
250
ns
μ C
Α
Note 1: Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
TO-3P (IXFQ) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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